| PART |
Description |
Maker |
| DF20CA120 DF20CA80-160 DF20CA160 DF20CA80 |
THREE PHASE DIODE MODULES (BRIDGE)
From old datasheet system
DIODE(THREE PHASES BRIDGE TYPE)
|
SANREX[SanRex Corporation]
|
| SKDH146-L100 SKDH146_12-L100 SKDH146_16-L100 SKDH1 |
MOSFET; ID (A): 0.03; VDS (V): 6; Pch : 0.25; |yfs| (S) typ: 29/29; PG (dB) typ: 30/30; Ciss (pF) typ: 2.1/2.1; NF (dB) typ: 1.1/1.1; IDSS (mA): Package: CMPAK-6
3-Phase Bridge Rectifier IGBT braking chopper
|
Semikron International
|
| SKDH116-L75 SKDH116_12-L75 SKDH116_16-L75 SKDH116/ |
三相整流桥IGBT的制动斩波器
MOSFET; ID (A): 0.03; VDS (V): 6; Pch : 0.15; |yfs| (S) typ: 0.029; PG (dB) typ: 22; Ciss (pF) typ: 2.1; NF (dB) typ: 1.75; IDSS (mA): -; Package: MPAK-4
3-Phase Bridge Rectifier IGBT braking chopper
|
Semikron International
|
| DF100BA80 DF100BA40 DF100BA40-80 |
DIODE(THREE PHASES BRIDGE TYPE)
From old datasheet system
|
SANREX[SanRex Corporation]
|
| QF50AA60 QF50AA40 |
TRANSISTOR MODULE (THREE PHASES BRIDGE TYPE)
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| S3901-FX |
MOSFET, Switching; VDSS (V): 400; ID (A): 15; Pch : 100; RDS (ON) typ. (ohm) @10V: 0.34; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: LDPAK (S)- (1)
|
Hamamatsu Photonics
|
| S7686 |
MOSFET, Switching; VDSS (V): -60; ID (A): -5; Pch : 20; RDS (ON) typ. (ohm) @10V: 0.14; RDS (ON) typ. (ohm) @4V[4.5V]: 0.2; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 10.8; Package: DPAK (L)- (2)
|
Hamamatsu Photonics
|
| IR15XB.. IR15XB08 IR15XB02 IR15XB04 IR15XB06 |
DIODE 15 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode
15.0 Amps Single Phase Full Wave Bridge Rectifier
800V Bridge in a IR15XB package
200V Bridge in a IR15XB package
400V Bridge in a IR15XB package
600V Bridge in a IR15XB package
|
Vishay Semiconductors
International Rectifier
|
| LA4440 |
6W 2-Channel / Bridge 19W typ Power Amplifier
6W 2-Channel, Bridge 19W typ Power Amplifier
From old datasheet system
|
Sanyo Semicon Device
|
| NX6508GK51 NX6508GH47 NX6508GH51 NX6508GH59 NX6508 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1510 nm (typ).
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1470 nm (typ).
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1590 nm (typ).
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1570 nm (typ).
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1490 nm (typ).
|
NEC
|
| DB107-BP DB105-BP DB101-BP DB104-BP |
RECTIFIER BRIDGE 1A 1000V DB-1 1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
RECTIFIER BRIDGE 1A 600V DB-1 1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
RECTIFIER BRIDGE 1A 50V DB-1 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
RECTIFIER BRIDGE 1A 400V DB-1
|
Micro Commercial Components, Corp.
|
| 2SA1256 |
High fT (230MHz typ), and small Cre (1.1pF typ). Small NF (2.5dB typ).
|
TY Semiconductor Co., Ltd
|
